NTMC083NP10M5L parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTMC083NP10M5L

Description:

NTMC083NP10M5L

Stock:

19153

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.18

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

2.9A(Ta),4.1A(Tc),2.4A(Ta),3.3A(Tc)

Drain source voltage (Vdss)

100V

FET Type

N and P Channel

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

5nC @ 10V,8.4nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

222pF @ 50V,525pF @ 50V

On resistance (maximum) for different Ids and Vgs

83 mΩ @ 1.5A,10V,131 mΩ @ 1.5A,10V

Power - maximum

1.6W(Ta),3.1W(Tc)

Vgs (th) (maximum) for different Ids

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NTMC083NP10M5L.pdf

NTMC083NP10M5L（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19153,Price reference "real-time change" China/Hongkong。 NTMC083NP10M5L package/specs, Download NTMC083NP10M5L、Datasheet。